简介:Ag-MgF2cermetfilmswithdifferentAgfractionswerepreparedbyvacuumevaporation.Themicrostruc-tureofthefilmswasexaminedbyRamanscatteringtechnique.Thesurface-enhancedRamanspectrumforMgF2moleculesinthecermetfilmstronglysuggeststheexistenceofAgnanoparticlesdispersedinMgF2matrix.TheintensitiesoftheRamanspectraofAg-MgF2cermetfilmsincreasewithAgfraction.TheenhancementofRamanscatteringdisappearswhenAgcontentreacheswt.20%.TheanalyseswiththetransmissionelectronmicroscopyshowedthatAg-MgF2cermetfilmsaremainlycomposedofamor-phousMgF2matrixwithembeddedfaced-center-cubicAgnanoparticles.Itsuggeststhatthepercolationthresholdshouldbearoundwt.20%ofAgcontent.
简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.
简介:AprototypeRamanlidarwasdesignedformonitoringtroposphericCO_2profileandotherscientificin-vestigations.ThethirdharmonicofNd:YAGlaser(354.7-nmwavelength)wasusedasstimulatedlightsourcetoprovidenighttimemeasurements.FilterwithhighrejectionratioperformancewasusedtoextractCO_2RamansignalsfromRayleigh-Miescatteringsignalseffectively.Toimprovetherealtimemonitoringfunction,atwo-channelsignalcollectionsystemwasdesignedtocollectCO_2andN_2Ramanscatteringsig-nalssimultaneously.TheN_2Ramanscatteringsignalswereusedtoretrieveaerosolextinctioncoefficient.TypicalfeaturesofCO_2concentrationprofileandaerosolextinctioncoefficientinHefeiwerepresented.ThemixingratioofatmosphericCO_2inHefeicanreachabout360-400ppmv.
简介:Weprovidethefirstdemonstrationofpureredemissioninthevisiblelightregionviathree-photonexcitationinmonodisperseNa_3ZrF_7:Ernanoparticles(NPs)byusingalaseroperatinginthetelecommunicationband.NPsof~22nmindiameteraresynthesizedat260°Cbythethermaldecompositionmethod.TheexperimentalresultsrevealthattheNa_3ZrF_7:ErNPsexhibitpureredemissioninthevisibleregionunder1480nmlaserexcitation,andtheemissionintensityissignificantlyinfluencedbytheEr~(3+)ionconcentration.Thedecaytimesofthe~4S_(3∕2)→~4F_(15∕2)and~4F_(9∕2)→~4F_(15∕2)transitionsoftheEr~(3+)ionsat540and655nm,respectively,arereducedbyincreasingtheEr~(3+)ionconcentrationintheNa_3ZrF_7:ErNPs.Thesuppressedemissionintensityresultfromthedefect-relatedquenchingeffect:whentrivalentEr~(3+)ionsreplactetravalentZr~(4+)ions,extraNationsandFvacanciesareformedtore-balancethechargeintheNa_3ZrF_7matrix.TheemissioncoloroftheNa_3ZrF_7:ErNPsisrelatedtothecrossrelaxationbetweenEr~(3+)ions.Theseresultsprovideanimportantsteptowardmoreeffectivebiologicalimagingandphotodynamictherapybyminimizingthescatteringoftheexcitationlightandincreasingthepenetrationdepth.
简介:Becausepulserepetitionrateaffecteddirectlythemomentumcouplingcoefficientoftransverselyexcitedatmospheric(TEA)CO2laserpropulsion,adoublepulsetrigger,controllinghighvoltageswitchoflaserexcitationcircuit,wasdesigned.Thepulseintervalrangedbetween5and100ms.Themomentumcouplingcoefficientforair-breathingmodelaserpropulsionwasstudiedexperimentally.Itwasfoundthatthemomentumcouplingcoefficientdecreasedwiththepulserepetitionrateincreasing.
简介:WhenfemtosecondlaserpulsesinterferewithchirpedfemtosecondlaserpulsesinAs2S3fiber,achirpedfibergratingisformed.Ananalyticalexpressionisgiventodescribethechirpedgrating,anditsBraggreflectivityiscalculated.BecauseofthehighphotosensitiveeffectofAs2S3material,thechirpedfibergratinghasawideBraggreflectivespectrumandhighreflectivitybychoosingproperparameters.Thisindicatesthatthechirpedfibergratingcanbeusedasastretcherinthefemtosecondchirpedpulseamplification(CPA)system.
简介:Thecombinationofdeepwetetchingandamagneto-rheologicalfinishing(MRF)processisinvestigatedtosimultaneouslyimprovelaserdamageresistanceofafused-silicasurfaceat355nm.ThesubsequentlydepositedSiO2coatingsareresearchedtoclarifytheimpactofsubstratefinishingtechnologyonthecoatings.Itisrevealedthatadeepremovalproceedingfromthesinglesideordoublesidehadasignificantimpactonthelaser-induceddamagethreshold(LIDT)ofthefusedsilica,especiallyfortherearsurface.Afterthedeepetching,theMRFprocessthatfolloweddoesnotactuallyincreasetheLIDT,butitdoesamelioratethesurfacequalitieswithoutadditionalLIDTdegradation.Thecombinationguaranteeboththeintegrityofthesurface’sfinishandthelaserdamageresistanceofthefusedsilicaandsubsequentSiO2coatings.
简介:TheCa_2SiO_4:Dy~(3+)phosphorwassynthesizedbythehightemperaturesolid-statereactionmethodinair.TheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorshowsseveralbandsat486,575,and665nmunderthe365-nmexcitation.TheeffectsofLi~+,Na~+,andK~+ontheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorwerestudied,TheresultsshowthattheemissionspectrumintensityisgreatlyinfluencedbyLi~+,Na~+,andK~+.Thechargecompensationconcentrationcorrespondingtothemaximumemissionintensityisdifferentwithdifferentchargecompensations.
简介:Higher-bandself-trappingandoscillation(rotation)ofnonlinearquadruplebeamsintwo-dimensional(2D)squarephotoniclatticesarenumericallydemonstrated.Underappropriateconditionsofnonlinearity,aquadruple-likebeamcanself-trapintolocalizedmodesthatresideinthesecondBraggreflectiongapthroughsingle-siteexcitation.Bychangingtheinitialorientationoftheincidentquadruplebeamrelatedtothelattices,periodicoscillationsofthelocalizedquadruplemodemaybeobtained.Thelocalizedquadruplestatebecomesarotatingdoublychargedopticalvortex(DCV)duringrotationandshouldundergocharge-flippingwhentherotatingdirectionisreversed.
简介:Aperiodicallypoledlithiumniobate(PPLN)opticalparametricgenerator(OPG)pumpedbyalaserdiode(LD)-pumpedQ-switchedTm,Ho:GdVO_4laseroperatedat2.048μmwithpumppulseof25nsandrepetitionrateof10kHzisreported.Acontinuoustunablemiddle-infrared(mid-IR)spectrumof3.88-4.34μmisobtainedbychangingthecrystaltemperaturefrom50to124°C.Whentheincidentpumppoweris3W,thetotalOPGoutputpoweris95mW,correspondingtoopticalconversionefficiencyof3.2%.
简介:EnhancementoflightextractioninaGaInNlight-emittingdiode(LED)employinganomni-directionalreflector(ODR)consistingofGaN,SnO_2nanorodandanAglayerwaspresented.TheODRcomprisesatransparent,quarterwavelayerofSnO_2nanorodcladedbysilverandservesasanohmiccontacttop-typeGaN.TransparentSnO_2solswereobtainedbysol-gelmethodfromSnCl_2·2H_2O,andSnO_2thinfilmswerepreparedbydip-coatingtechnique.TheaveragesizeofthesphericalSnO_2particlesobtainedis200nm.TherefractiveindexofthenanorodSnO_2filmlayeris2.01.TheGaInNLEDswithGaN/SnO_2/AgODRshowalowerforwardvoltage.ThiswasattributedtotheenhancedreflectivityoftheODRthatemploysthenanorodSnO_2filmlayer.ExperimentalresultsshowthatODR-LEDshaveloweropticallossesandhigherextractionefficiencyascomparedtoconventionalLEDswithNi/AucontactsandconventionalLEDsemployingadistributedBraggreflector(DBR).
简介:AhighlyTm-dopedleadgermanateglassfiberisdevelopedusingtherod-in-tubemethod.The~2μmlaserbeamqualityofthefiberis~1.5.Theleadgermanatecompositefiberjumpersarehomemadeforallthefiberlaserinvestigations.Whencoreispumpedbya1590nmYb/Erfiberlaser,amaximumlaseroutputof313mWisachievedata670mWpumppower,andthecorrespondingslopeefficiencyis~52.8%.Moreover,byusinga2cmlongleadgermanatefiberasthegainmedium,a33mW1942nmTmlaserisalsodemonstrated.
简介:Anultra-broadbandandfabrication-tolerantsiliconpolarizationrotatorsplitterisproposedinthisLetter.Benefittingfromthebroadbandandlow-losscharacteristicsofthebi-leveltaperandcounter-taperedcoupler,thedesigneddevicehasasimulatedinsertionlossandcrosstalkoflessthan0.2and-15dBinthewavebandfrom1290to1610nm.Thesecharacteristicsmakeitvaluableinapplicationswithlargebandwidthrequirements,suchasfull-gridCoarsewavelengthdivisionmultiplexer(CWDM)anddiplexer/triplexerfiber-to-the-homesystems.Thefabricationtoleranceofthedesignisalsoanalyzed,showingthatthedeviceperformanceisquitestablewithnormalmanufacturingerrorsinsiliconphotonicsfoundries.
简介:AseriesofAlx-(Alq3)1-xgranularfilmsispreparedonSiwaferwithnativeoxidelayerusingco-evaporationtechnique.Largelateralphotovoltaiceffect(LPE)isobserved,withanoptimalLPVsensitivityof75mV/mminx=0.35sample.ThedependenceofLPEontemperatureandAlcompositionisinvestigated,andthepossiblemechanismisdiscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.