EnhancementoflightextractioninaGaInNlight-emittingdiode(LED)employinganomni-directionalreflector(ODR)consistingofGaN,SnO_2nanorodandanAglayerwaspresented.TheODRcomprisesatransparent,quarterwavelayerofSnO_2nanorodcladedbysilverandservesasanohmiccontacttop-typeGaN.TransparentSnO_2solswereobtainedbysol-gelmethodfromSnCl_2·2H_2O,andSnO_2thinfilmswerepreparedbydip-coatingtechnique.TheaveragesizeofthesphericalSnO_2particlesobtainedis200nm.TherefractiveindexofthenanorodSnO_2filmlayeris2.01.TheGaInNLEDswithGaN/SnO_2/AgODRshowalowerforwardvoltage.ThiswasattributedtotheenhancedreflectivityoftheODRthatemploysthenanorodSnO_2filmlayer.ExperimentalresultsshowthatODR-LEDshaveloweropticallossesandhigherextractionefficiencyascomparedtoconventionalLEDswithNi/AucontactsandconventionalLEDsemployingadistributedBraggreflector(DBR).
