Dependency of photoluminescence from SiO2 thin films containing Si1-xGex quantum dots on Ge/Si doping ratio-中国期刊网

摘要 SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.

1江绍基;余梦影;魏钰薇;唐继甲. Monte Carlo Simulation of Sculptured Thin Films Growth of SiO2 on Si for Applications.物理,2008-12.
2PENGYingcai 等. Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures.物理电子学,1996-03.
3. Study on Photoluminescence fromC+ Ion Implanted SiO2 Films.物理,1997-06.
4WUXiao-jing LUOFeng-guang. Design of MMI 1×8 Optical Power Splitters Used Si-based SiO2 Waveguide.物理电子学,2004-03.
5FANZhi－xin. Theoretical Calculation on Optimum Si—doping Content in Boron Carbide Thin Film.物理电子学,2002-02.
6JIZhenguo;NoritakaUsami;等. Strain Relaxation Related Photoluminescence Bands in Ge／Si Short Period Superlattices.物理电子学,1998-02.
7Z.M.Jiang X.M.Jiang 等. Lattice strains and composition of self—organized Ge dots grown on Si（001）.核技术及应用,2000-01.
8WeimingXu YongfaZhu 等. Diffusing behavior of MoO3 on Al2O3 and SiO2 thin films.核技术及应用,2000-01.
9张立春;李清山;董艳锋;马自侠. Visible photoluminescence from ZnO/diamond-like carbon thin films.物理电子学,2012-02.
10RAORui XUZhong-yang等. Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing.材料科学与工程,2002-04.

Dependency of photoluminescence from SiO2 thin films containing Si1-xGex quantum dots on Ge/Si doping ratio

来源期刊

相关推荐

同分类资源更多

相关关键词

Dependency of photoluminescence from SiO2 thin films containing Si1-xGex quantum dots on Ge/Si doping ratio

来源期刊

相关推荐

同分类资源 更多

相关关键词

同分类资源更多