Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.