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1 个结果
  • 简介:TheverticalandlateralinteractionsinamultisheetarrayofInAs/GaAsquantumdotsareanalyzedbyfiniteelementmethod(FEM).Itisshownthatduetotheeffectsofverticalinteraction,nucleationpreferstohappenaboveburiedquantumdots(QDs).Meanwhile,theeffectsoflateralinteractionadjustthespacingoflateralneighboringQDs.TheverticalcouplingbecomesstrongwithdeceasingGaAsspacerheightandincreasingnumberofburiedlayers,whilethelateralcouplingbecomesstrongwithincreasingInAswettinglayerthickness.Thephenomenonthat,aftersuccessivelayers,thespacingandsizeofQDsislandsbecomeprogressivelymoreuniformisexplainedaccordingtotheminimumpotentialenergytheory.

  • 标签: INAS GaAs 量子点 阵列 最小势能原理 横向耦合