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简介：CharacteristicsofsiliconoxynitridesmadebyECRplasmas；CharacterizationandcomparisonofPECVDsiliconnitrideandsiliconoxynitridedielectricforMIMcapacitors；CharacterizationofsiliconoxynitridethinfilmsdepositedbyECR-PECVD；Characterizationofsiliconoxynitridesandhigh-kdielectricmaterialsbyangle-resolvedX-rayphotoelectronspectroscopy

简介：[篇名]3-inchfull-colorOLEDdisplayusingaplasticsubstrate,[篇名]AsignificantimprovementinmemoryretentionofMFISstructurefor1T-typeferroelectricmemorybyrapidthermalannealing,[篇名]Accuratereliabilityevaluationofnon-uniformultrathinoxynitridcandhigh-klayers,[篇名]Advancedgatedielectricmaterialsforsub-100nmCMOS,[篇名]AINfilmscpitaxialyformedbydirectnitridationofsapphireusingaluminumoxynitridcasabufferlayer,[篇名]Amorphoussilicon-oxynitridcsubmicronfibres,[篇名]CharacteristicsofCr-Al-N-Othinfilmspreparedbypulsedlaserdeposition.

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简介：Characterisationandapplicationoftitaniumcarbonitride-basedcuttingtools；Compositeceramicsandcoatingsfortribotechnicalapplication；Crystallizationofpolymer-derivedsiliconcarbonitrideat1873Kundernitrogenoverpressure；1Effectofcoolingconditionsonplasma-carbonitridedironsurfaces

简介：SY509-3-64[篇名]DegradationandSILCeffectsofRPECVDsub-2.0nmoxide/nitrideandoxynitridedielectricsunderconstantcurrentstress；SY509-3-65[篇名]EffectofMicrostructuralVariablesontheErosionofSiliconNitrideCeramics……

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简介：SY509-3-50[篇名]Effectofnicotridingconditionsontheoperatingpropertiesofsteels；SY509-3-51[篇名]Enhancedcarburizingusinganovelaccelerant；……

简介：[篇名]Astudyonfrictionandwearbehaviourofcarburized,carbonitridedandboridedAISI1020and5115steels,[篇名]AlloyCarburizationatTemperaturesof1,200-2,100F(650-1,150℃),[篇名]Amorphoussiliconcarbonitridefibersdrawnfromalkoxidemodifiedceraser,[篇名]Bearingswithincrcasedreliability,[篇名]Brightoutlookforhardcoatings,[篇名]Carbonitridccoatingbylow-temperaturediffusionprocess,[篇名]Carbonitridcnanomaterials,thinfilms,andsolids.

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简介：SY509-3-57[篇名]FormationofnanocompositeLangmuir-Blodgettaltematemultilayers；SY509-3-58[篇名]GrowthandcharacterizationofanodicfilmsonInPinKOHand(NH{sub}4){sub}2S；……

简介：[篇名]ChemicalbathdepositionofCdSthinfilmsforopticalandoptoclcctronicapplications,[篇名]Chloridehydrometallurgyforcomplexsulphides:areview,[篇名]CHLORIDEPROCESSINGOFMETALSULPHIDES:REVIEWOFFUNDAMENTALSANDAPPLICATIONS,[篇名]CopperinPoland,[篇名]Copperinsolidifiedcoppersmelterslags,[篇名]Copperlossesincoppersmeltingslags,[篇名]Corrosionbehaviorofalloy31-UNSNO8031-underconditionsofoil&gasproduction.

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简介：CVDSYNTHESISANDCEMSSTUDYOFFeSULPHIDEANDOXIDETHINFILMS；DESIGNANDANALYSISOFWAVELENGTHSELECTIVEHOLOGRAPHICSOLARCONCENTRATORSFORITSUSEINDIFFERENTKINDOFSOLARCELLS；DistinguishingoretypesattheLacdesliesPGE-gold-copper-nickelmine,Ontario:implicationforresourcemodelling,miningandprocessing；Effectofrareearthsoncaststeelsulphideinclusions；

简介：潮湿、腐蚀、进水是造成电子产品寿命降低或损坏的重要因素，在电子产品表面涂覆防护涂层，是提高电子产品使用寿命的重要方法之一。目前大多数电子产品采用三防漆和派瑞林涂层实现防水与防护，然而由于三防漆和派瑞林涂层相对较厚，涂覆于电子产品表面后影响产品的外观、导电性、散热性和信号传输性。因此如何利用纳米级别涂层替代三防漆和派瑞林，在保证防水、防护性能的同时，尽量减少其对产品的外观、导电性、散热性和信号传输性的影响，是电子产品防水涂层研发过程中需要解决的关键技术问题。

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