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  • 简介:  ItislearnedfromtheMinistryofScienceandTechnologythatinordertopromotetheshiftofChina'schemicalindustrytowardanenergyefficientandenvironmentallyfriendlyproductmode,thetechnologyforintensificationofchemicalreactionprocesseshasbeenincludedintheNational"863"Projectofthe"EleventhFive-YearPlan",andtheapplicationforresearchprojectproposalsistobeaccepted.……

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  • 简介:Thephotocurrent-voltagecharacteristicsandphotoelectricsensitivityofa-Si:Hsampleswithslitandcombelectrodesaremeasured.Amethodforcalculatingthechargeintensifyinggainfromthephotoelectricsensitivityisproposed.Theobtainedchargeintensifyinggainofa-Si:Hunderanelectricfieldof105V/cmthroughthismethodisashighas4.3×103.Thegenerationprocessofthechargeintensificationeffectina-Si:Hisdiscussedonthebasisoftheenergyleveldiagram.Andtheproductofelectron’smobilityanditslifetimeiscalculatedfromthemeasuredvaluesofthegains.

  • 标签: A-SI:H semiconductor CHARGE INTENSIFICATION EFFECT PHOTOELECTRIC