简介：ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx（x<2）andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.

简介：Thepropagationoftwofemtosecondpulsesintheregionwithminimumgroup-velocitydispersion,influencedbythecrossphasemodulation(XPM)inphotoniccrystalfiber(PCF),isinvestigatedinthispaper.Theadaptivesplit-stepFouriermethodisusedtosimulatethegeneralizednonlinearSchrdingerequations(GNSE).ThenumericalresultsshowthatthecombinationoftheRamanscatteringandXPMcanmakethespectrumandthepulseshapechanged,inducingthepulsecompressionandsupercontinuumgeneration.TheRamaneffectfrommolecularvibrations,whichcanmakethepulsespectruminanomalous-dispersionregiontobemoresymmetrical,isalsodiscussed.

简介：Cadmiumzincleadsulfide[Cd0.8(Zn1-x,Pbx)0.2S]nano-powderswerepreparedbyanimprovedcoprecipitationmethod.TheeffectofPb2+concentrationat500ConthephaseandcrystallinestructureoftheCd0.8(Zn1-x,Pbx)0.2SpowderswereinvestigatedbyX-raydiffraction(XRD).Accordingtothetransmissionelectronmicroscopy(TEM)images,theparticlessizeareintherangeof58nmto72nm.Inaddition,opticalbandgapenergyandopticalconstantsofnano-powdersweredeterminedusingtheultraviolet(UV)spectrum,Fourniertransforminfraredspectroscopy(FTIR),andKramers-Kroniganalysis,respectively.Wecalculatetherefractiveindexn,extinctioncoefficientk,anddielectricfunctionεasafunctionofthewavenumber.TheexperimentresultsdemonstratethattheamountofPb+2hasbeenplayinganincreasinglyimportantroleonopticalpropertiesofCZPSnanocrystals.

简介：Twoalkylsubstitutedpolythiophenederivatives:poly(3-hexylthiophene)(P3HT)andpoly(3-decylthiophene)(P3DT),havesynthesizedbyoxidationcouplingpolymerizationof3-alkylthiopheneusingiron(III)chlorideascatalystinchloroform.Whilebothpolymersinpurechloroformsolutionhavemaximumabsorptionatapproximatelysamewavelengthof440nm,theybehavedifferentlywithrespecttochangesobservedontheirUV-visibleandphotoluminescencespectrawhenthequalityofthepoorsolventischangedingoodsolvent(chloroform)/poorsolvent(methanol)mixtures.Withincreasingvolumefractionofmethanolinmixtures,theabsorptionspectraofP3HTandP3DTred-shift,peakingatmaximumwavelengthof495nm(P3HT)and510nm(P3DT).Furthermore,theabsorptionspectraofthetwopolymersinchloroformblue-shiftasthetemperaturerises.P3HTshows4.73nmblue-shiftsat50℃incontrasttothecaseat20℃,whileP3DTblue-shiftsabout5.04nm.Thephotoluminescencespectraofthetwopolymersinmixedsolutionarealsoinvestigated,whichshowthattheluminescencespectrashifttolongerwavelengthwithanaccompanyingdropinthePLintensityasmethanolisincreased.Theabsorptionandemissionspectraofthetwopolymersinapoorsolventandathinfilmaresimilar,whichindicatethatasimilarlongerconjugationlengthinthetwocases.Itcouldconcludethatthepolymersexistalmostthesameconformationsandaggregationsinbothapoorsolventandathinfilm.P3DTexhibitsmoresensitivespectraproperties(bigred-shiftsinbothabsorptionandluminescencespectrainpoorsolventsandlargeblue-shiftsathightemperature)withcontrasttoP3HT,whichimplythatlongsidealkylmayimprovethechromicpropertiesofthepolymer.

简介：Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.

简介：Thebuildingintegratedphotovoltaics(BIPV)applicationisoneofthemainstudytopicsinthesustainablebuildingfield.Inthispaper,thehighcolorrenderingindex(HCRI)-BIPVwindowsystemisdevelopedtobeusedintheindoorenvironmentalcontrol,whosemodulematerialhasappearedtobeeffectiveinimprovingthevisibletransmittanceandreducingtheabsorption.Thispaperdescribestheperformanceofgrid-connectedHCRI-BIPVwindowsystemwith0.75kWpcapacityinstalledinanofficebuildingforanaturalventilationsolution.TheexperimentalresultsindicatethataccumulativepowergenerationoftheHCRI-BIPVwindowsystemis157.60WKhduringthe7-monthexperimentperiod.Forconsiderationofeachevaluatedfactors,theHCRI-BIPVwindowsystemnotonlyoffersthepassiveenergysituationforitspowerloadingbutalsoimprovestheindoorthermalenvironmentbynaturalventilation.

简介：Ozoneisagreenhousegas.Ozoneabsorptioncrosssectionshavebeenreportedwithdiscrepanciesandinconsistencies.Inthispaper,simultaneouseffectsoftheopticalpathlengthandtemperaturevariationsonozonegasabsorptioncrosssectionsareinvestigatedatdifferentwavelengths.HITRAN2012,thelatestavailablelinelistonspectralcalc.comsimulator,isusedinthisstudytosimulateozonegasabsorptioncrosssectionsinrelationtothesimultaneouseffectsoftheopticalpathlengthandtemperatureatthewavelengthsof603nmand575nm.Resultsobtainedforgascellswiththeopticalpathlengthfrom10cmto120cmshowthatthedecreaseintemperaturesfrom313Kto103Kresultsintheincreaseinozonegasabsorptioncrosssections.Atwavelengthsof603nmand575nm,thepercentageincreaseofozonegasabsorptioncrosssectionsis1.22%and0.71%,respectively.Resultsobtainedinthisstudyshowthatinthevisiblespectrum,atconstantpressure,ozonegasabsorptioncrosssectionsaredependentonthetemperatureandwavelengthbutdonotdependontheopticalpathlength.Analysisinthisworkaddressesdiscrepanciesinozonegasabsorptioncrosssectionsinrelationtothetemperatureinthevisiblespectrum;thus,theresultscanbeappliedtogetoptimalconfigurationofhighaccuracyozonegassensors.

简介：Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.

简介：有约束力的精力和浅施主杂质的空效果精力移动在拉紧的GaN/AlxGa1xN球形的有限潜力的量声明点(QD)基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加，达到最大的值，然后当QD半径为任何电场增加，减少。而且，有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多，并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力，并且结果证明紧张效果更加提高杂质绑定精力，特别为小QD尺寸。我们也在我们的工作考虑绝缘的失配。