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简介：Theinfluenceofsiliconsliceflatnessonbondingtechnologyandtherelationbetweenaforeignparticleandresultingbubblearequantitativelypresentedbytheelastictheory.ItisdemonstratedexperimentallybyX-raydoublecrystaldiffractometryandinfraredimager.

简介：Inordertorealizetheplanargradientrefractiveindex(GRIN)microlenswhichisbaseduponporoussilicon(PSi)andfabricatedonsilicononinsulator(SOI),anovelanodizationmethodisusedbyapplyinglateralelectricfield.Themicrolenswithsmoothvariationoftheeffectiveopticalthicknessisachieved.Thelensistransparentintheinfraredregion,includingtheopticalcommunicationwindow(1.3μm

简介：Thepaperanalysesredoxreactionsofan-tioxidantsSiandSiCeteatdifferentpositionsinthecourseofoxidationofcarbon-containingmaterials,Itispointedoutthatredoxreactionofantioxidantsinoxidized-zoneplaysaveryimportantpartinantioxidationofcarbon-con-tainingmaterials,ThereasonwhySiCcanmakecarbon-containingmaterialantioxideatthermodynamictemperaturehasbeenex-plained,Experimentprovesthatantioxidantsinoxidizedzonecanmakecarbon-containingmaterilsantioxidize.

简介：Thereisarapidlygrowingdemandtousesiliconandsiliconnitride（Si3N4）integratedphotonicsforsensingapplications,rangingfromrefractiveindextospectroscopicsensing.BymakinguseofadvancedCMOStechnology,complexminiaturizedcircuitscanbeeasilyrealizedonalargescaleandatalowcostcoveringvisibletomid-IRwavelengths.InthispaperwepresentourrecentworkonthedevelopmentofsiliconandSi3N4-basedphotonicintegratedcircuitsforvariousspectroscopicsensingapplications.Wereportourfindingsonwaveguide-basedabsorption,andRamanandsurfaceenhancedRamanspectroscopy.Finallywereporton-chipspectrometersandon-chipbroadbandlightsourcescoveringverynear-IRtomid-IRwavelengthstorealizefullyintegratedspectroscopicsystemsonachip.

简介：Si富有的硅氧化膜被RF磁控管劈啪作响到合成Si/SiO_2目标上扔。在在不同温度退火了以后，与硅nanocrystals嵌入的硅氧化膜被获得。从与硅nanocrystals嵌入的硅氧化膜的光致发光(PL)在房间温度被观察。强壮的山峰是at360nm，它的位置独立于退火的温度。在与硅nanocrystals嵌入的硅氧化膜的360-nmPL的起源被讨论。

简介：Potexperimentsandfieldtrialswereconductedtoinvestigatethechangesintrichloroaceticacid(TCA)solublesilicon(Si)intheleavesofrice(OryzasativaL.)andtoexaminethefeasibilityofusingTCA-solubleSicontentasanindexfordiagnosingSideficiency,TheTCA-solubleSicontentwassignificantlyhigherintheleavesofbothSi-treatedand-untreatedriceattheelongationstagecomparedwiththatattilleringstage,ItwashigherintheSi-treatedplantsthaninthecontrolsthroughoutthewholegrowthperiod.However,whetherdressedatelongationorbootinstage,siliconfertilzerresultedinasignificantincreaseinTCA-solubleSioneweektotendaysafterapplication,ThesamewastrueforthetotalSiaccumulationintheplants.AcolsepositiviecorrelationwafoundbetweenTCA-solubleSiandtotalSiinPlantsgrownonpotsoils(r=0.669,P<0.01,n=26).TheresultsobtainedinthefieldtrialsrevealedthattheavailableSiextrctedbysodiumacetate(pH4.0)couldnotpreicttheresponseofricetoaddedSiinthecalcareoussoilssatisfactorily.NosignificancorrelationwasfoundbetweensoilavailableSicontentandriceyield,butTCA-solubleSiintheleafbladesofricewassignificantlycoorelatedbothwithriceyield(r=0.57,P<0.01,n=30)andwithtotalplantSi(r=089,P<0.01,n=30),Inisrecommendedthat,whth95percentconfidence,thecriticalvalueofTCA-solubleSiintheleavesofriceshouldbe52-57mgSikg^-1,abovewhichnopositiveresponseofricetoaddedSiwouldbeexpected.

简介：ＡｔｔｈｅｉｎｖｉｔａｔｉｏｎｏｆＤｉｓｔｒｉｃｔ５１７０，ＲｏｔａｒｙＣｌｕｂｏｆＣａｌｉｆｏｒｎｉａｏｆＵＳＡ，ａ５ｍｅｍｂｅｒＣＡＦＩＵｄｅｌｅｇａｔｉｏｎｈｅａｄｅｄｂｙＭｒ．ＴａｎＲｏｎｇｇｅｎ，ＣｏｕｎｃｉｌＭｅｍｂｅｒ，ｖｉｓｉｔ...

简介：内在的hydrogenated非结晶的硅(a-Si:H)电影在n类型上被扔由到分析的热电线的化学蒸汽免职(HWCVD)的水晶的硅(c-Si)晶片非结晶/水晶的heterointerface钝化性质。对称的heterostructure的少数搬运人一生被使用请教WCT-120一生测试者系统，和决定从一生测量的接口状态密度被建议的一个简单方法的Sinton测量。接口状态密度测量被使用深水平的短暂光谱学(DLTS)证明简单方法的有效性也执行。微观结构和a-Si的氢结合配置:有不同的氢冲淡的H电影被使用分光镜的ellipsometry(SE)和Fourier变换调查红外线的光谱学(FTIR)分别地。接口状态密度的更低的值被使用a-Si获得:有水晶的硅上的更一致的、紧缩的微观结构和更少体积缺点的H电影由HWCVD扔了。

简介：Wereviewthestateoftheartandourperspectivesonsiliconandhybridsiliconphotonicdevicesforopticalinterconnectsindatacenters.Afterabriefdiscussionofthekeyrequirementsforintra-datacenteropticalinterconnects,weproposeawavelength-division-multiplexing(WDM)-basedopticalinterconnectforintra-datacenterapplications.Followingourproposedinterconnectsconfiguration,thebulkofthereviewemphasizesrecentdevelopmentsconcerningon-chiphybridsiliconmicrolasersandWDMtransmitters,andsiliconphotonicswitchfabricsforintra-datacenters.ForhybridsiliconmicrolasersandWDMtransmitters,weoutlinetheremainingchallengesandkeyissuestowardrealizinglowpowerconsumption,directmodulation,andintegrationofmultiwavelengthmicrolaserarrays.Forsiliconphotonicswitchfabrics,wereviewvarioustopologiesandconfigurationsofhigh-port-countN-by-NswitchfabricsusingMach–Zehnderinterferometersandmicroringresonatorsasswitchelements,anddiscusstheirprospectstowardpracticalimplementationswithactivereconfiguration.Forthemicroring-basedswitchfabrics,wereviewrecentdevelopmentsofactivestabilizationschemesatthesubsystemlevel.Last,weoutlineseverallargechallengesandproblemsforsiliconandhybridsiliconphotonicstomeetforintra-datacenterapplicationsandproposepotentialsolutions.

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简介：PolysiliconMicroelectromechanicalsystems(MEMS)arethesubjectofintensiveresearches.SurfacechemistryandtopographyofaMEMSteststructurefabricatedatSandiaNationalLaboratory,USA,werestudiedbymeansofscanningelectronmicroscopy(SEM),X-rayphotoelectronspectroscopy(XPS)andatomicforcemicroscopy(AFM).XPSC()andSi2,spectrafromthepolysilieoncomponents,siliconnitridesubstrateandareferencesiliconwaferwerecompared.Theresultsconfirmthepresenceofaself-assembledmonolayer(SAM)ontheMEMSsurface.Anisland-likemorphologywasfoundonbothpolysiliconandsiliconnitridesurfacesoftheMEMS.Theislandstaketheformofcaps,beingupto0.5μmindiameterand20nminheight.Itisconcludedthattheco-existenceofcolumnargrowthandequiaxedgrowthduringthelowpressurechemicalvapordeposition(LPCVD)oftheselayersleadstotheobservedmorphologyandtheislandsarecapstothecolumnarstructures.

简介：Amethodforrapiddeterminationofsiliconcontentinricewasintroduced.Thereliabilityofthismethodwasverifiedbyusingarecombinantinbredline(RIL)populationofricecrossZhenshan97B/Milyang46.Twohundredandforty-nineRILsweretransplantedintworeplications.Simplecorrelationcoefficientsonthesiliconcontentinthehull,flagleafandsteminricebetweenduplicatesamplesof498ricematerialswere0.97954,0.97026and0.98848,respectively.Tenrepresentativesampleswereselectedformeasurementusingthehigh-temperaturealkalinefusionmethod.Simplecorrelationcoefficientbetweenthesiliconcontentsdeterminedbythehigh-temperaturealkalinefusionmethodandbythepresentmethodis0.9993.

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简介：多孔的硅是用热氧化和silanization的functionalized。HYSA抗体在这篇论文被使不能调动到多孔的表面。当BSA被纳入PS表面时，在思考光谱和光致发光光谱的变化被调查。结果证明PS的光山峰消失。在抗原抗体反应以后，更高轻的排放被观察并且也，红转移的思考光谱。因此，这研究为敏感没有标签的光免疫传感器的发展打一个基础。

简介：ＳｉｌｉｃｏｎＰｈｏｔｏｄｉｏｄｅｗｉｔｈＶｅｒｙＳｍａｌＳｅｎｓｉｔｉｖｅＡｒｅａ①ＹＩＮＣｈａｎｇｓｏｎｇ，ＬＩＸｉａｏｊｕｎ（ＷｕｈａｎＵｎｉｖｅｒｓｉｔｙ，Ｗｕｈａｎ４３００７２，ＣＨＮ）Ａｂｓｔｒａｃｔ：ＴｈｅｓｉｌｉｃｏｎＰＮｊｕｎｃｔｉ...

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