学科分类
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1 个结果
  • 简介:EnhancementoflightextractioninaGaInNlight-emittingdiode(LED)employinganomni-directionalreflector(ODR)consistingofGaN,SnO_2nanorodandanAglayerwaspresented.TheODRcomprisesatransparent,quarterwavelayerofSnO_2nanorodcladedbysilverandservesasanohmiccontacttop-typeGaN.TransparentSnO_2solswereobtainedbysol-gelmethodfromSnCl_2·2H_2O,andSnO_2thinfilmswerepreparedbydip-coatingtechnique.TheaveragesizeofthesphericalSnO_2particlesobtainedis200nm.TherefractiveindexofthenanorodSnO_2filmlayeris2.01.TheGaInNLEDswithGaN/SnO_2/AgODRshowalowerforwardvoltage.ThiswasattributedtotheenhancedreflectivityoftheODRthatemploysthenanorodSnO_2filmlayer.ExperimentalresultsshowthatODR-LEDshaveloweropticallossesandhigherextractionefficiencyascomparedtoconventionalLEDswithNi/AucontactsandconventionalLEDsemployingadistributedBraggreflector(DBR).

  • 标签: GAINN 二极管 光学元素 反射镜