简介：从同样渗出的镁合金Mg-3%Al-1%Zn(AZ31)营舍准备的样品在低周期的疲劳测试被利用以便调查频率依赖者疲劳生活。充分颠倒的控制紧张的紧张压缩疲劳测试在空中在1Hz和10Hz的频率被执行。微观结构被光显微镜学(OM)和扫描电子显微镜学(SEM)检验。当紧张振幅比0.2%低时，疲劳生活与装载频率展出了积极关联，并且twinning的活动在10Hz被增加。当紧张振幅比0.2%高时，重要twinning在生活被发现独立于频率的这二频率，和疲劳被观察。为这频率相关的疲劳一生的可能的原因可能由于在装载频率和紧张振幅之上的twinning的依赖。

简介：Thesemi-continuouscastingofZK60magnesiumalloyunderdifferentmiddlefrequencyelectromagneticfieldconditionswasexamined.Effectsofmiddlefrequencyelectromagneticfieldonmicrostructure,precipitationsandtensilepropertiesareinvestigated.TheresultsshowthatthemicrostructuresofZK60magnesiumalloyarerefinedanddistributionuniformityofprecipitationsisobservedafterapplyingthemiddlefrequencyelectromagneticfield.Andthetensilepropertiesofthebilletsproducedbymiddlefrequencyelectromagneticfieldareincreased.

简介：Frequency-doubledantireflectioncoatingssimultaneouslyeffectiveat1064nmand532nmweredepositedonthelithiumtriborate(LiB3O5orLBO)crystalsusingtheelectronbeamevaporationmethod.Comparingwiththesamplewithoutbufferlayer,itisfoundthattheadhesionofthesamplewithbufferlayerofSiO2betweencoatingandLBOsubstrateisimprovedsignificantlyfrom137.4mNtogreaterthan200mN.Andthelaser-induceddamagethresholdisincreasedby20%from15.1J/cm2to18.6J/cm2.ThestrengtheningmechanismofadhesionofthebufferlayerofSiO2isdiscussedbyconsideringfullplasticindentationandsheartheory.

简介：1064nm，532nm有在涂层和底层之间的SiO2的缓冲区层的加倍频率的antireflection(AR)涂层被电子横梁蒸发技术在锂triborate(LiB3O5或LBO)的底层上制作晶体。样品的剩余反射分别地在1064nm和532nm是0.07%和0.11%。粘附和样品的导致激光的损坏阀值(LIDT)比200mN和18.6J/cm2大。粘附的加强的机制和SiO2的缓冲区层的LIDT被考虑完整的塑料缩进讨论并且砍一部plated电影的理论，和分裂分别地由热吃惊应力导致了。