简介：Depositionofnanocrystallinesilicon(nc-Si)onglassatverylowtemperaturesbyelectroncyclotronresonance(ECR)plasmaenhancedchemicalvapourdeposition(PECVD)wasinvestigated.Itwasshownthatnc-Sicouldbedepositedfromhydrogendilutedsilanegasatasubstratetemperatureof80℃withacrystallinefractionupto80%andalateralgrainsizeofaround50nm.Thiswasachievedbygrowingthenc-Siinalowpressureregimewhichensuredthatmono-silylspecieswerethedominantdepositionprecursor.Furthermore,ahighfluxofenergetichydrogenionswasrequiredtoinducecrystallisationofthesiliconmaterialthroughachemicalannealingprocess.
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