简介:TheRatnagotravibbāga(abbr.RGV)isoneofthemostinfluentialtextsamongIndicworksthatteachtheBuddha-naturedoctrineinTibet.NotranslationofthetextseemstohaveexistedinTibetbeforetheⅡthcentury,inasmuchasnocatalogueoftheimperialperiod(the9thcentury),suchasthelDandkarmaandvPhangthangma,showsanyrecord.AlthoughonlyasingleTibetantranslationisextant(thatofrNgogBloldanshesrab[1069-Ⅱ09]andSajjana),vGosLotsābagZhonnudpal(1392-1481)reportsthatuptohistimesixtranslationshadalreadybeenmade:1
简介:ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.
简介:Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.
简介:以便获得对Mg-Ga二进制系统的热力学的描述,对系统的热力学的评价通过Thermo计算用CALPHAD方法被执行?软件包裹基于从出版文学的所有可得到的试验性的数据的评估。答案阶段包括液体,hcp(Mg)并且斜方晶(Ga),被代理答案模型,过量吉布斯精力与Redlich-Kister多项式被表示描述。同时,所有金属间化合的混合物,Mg5Ga2,Mg2Ga,MgGa,MgGa2和Mg2Ga5,作为stoichiometric混合物被建模。在Mg-Ga二进制系统提出各种各样的阶段的吉布斯精力的一套前後一致的热力学的参数最后被获得。好一些的协议在计算结果和报导试验性的数据之间被完成。
简介:9月15日中午,中货航引进的第2架B747-400ERF货机从美国西雅图顺利飞抵上海浦东国际机场。
简介:有5-8nm的尺寸的做Eu的GaOOHnanoparticles被热水的方法作为表面活化剂用钠dodecylbenzenesulfonate(SDBS)准备。做Eu的-Ga2O3和-Ga2O3被退火进一步制作GaOOH:Eu然后由X光检查衍射(XRD)描绘了,传播电子显微镜学(TEM)和光致发光(PL)。TEM结果显示出那monodisperse做Eu3+的GaOOHnanoparticles形式然后变换进通过退火的做Eu3+的-Ga2O3和-Ga2O3GaOOH:在600和900点的Eunanoparticles?????????????????@
简介:GA3与GA4+7采用2种不同浓度,在花前10d、1d和盛花期对巨峰(Kyoho)葡萄进行无核处理,花后10d用GA,和CPPU以三种浓度组配进行膨大处理。各处理都使巨峰葡萄的无核率大幅度提高。GA3处理比GA4+7处理更有利于巨峰葡萄产生无核果。在GA3的处理中花前1d处理对其产生的无核效应明显大于花前10d和盛花期的处理,以花前1dGA,12.5mgL^-1+盛花后10dGA312.5mgL^-1效果最好,其无核率可达90.91%。GA4+7对提高巨峰葡萄的座果效果比较显著,以花前1dGA,25mgL^-1+盛花期GA325mgL^-1+CPPU20mgL^-1效果比较好,座果为对照的123.1%。在巨峰葡萄上,用GA3进行处理的果实有变长的趋势;而用GA4+7进行处理的则有果实变圆的趋势。膨大处理时,配施CPPU比单用GA3效果要好。
简介:Themicro-characteristicsofthestreakymarksandthecorrespondingsubstratesurfaceofgalvannealed(GA)steelsheetshavebeeninvestigatedusingSEMandFIB.Thestreakymarkareaseemstohavemanycavities,similartocraters,whichscatterlightandmakethesurfaceappeardarkerwhencomparedwiththesurroundingnormalarea.Moreover,itisfoundthattheirregularityordifferenceinsteelgrainsizetendstoaffectthesurfacequalityoftheGAsteelsheets.Duringalloying,thediffusionspeedofZn-Feonthegrainboundaryisfasterthanthatatthecenterofthegrain,whichresultsintheselectiveformationofcrater-likemorphologyinthecoatingareawithlargersteelgrains.DuetothecleargrainboundaryofIFsteel,apparentstreakymarkswillbeformedonthecoatin,iftheIFsteelsurfaceconsistsofrainsofirreularsize.
简介:Anewapproachtoreducingtheseismicresponseofspatialstructureswithmagneto-rheological(MR)dampersispresentedinthispaper.TheGeneticAlgorithmwithsmallpopulations(μGA)isusedtooptimizethecontrolfortheMRdamperstoreducestructuralvibration,whichisdifficulttoachieveusingclassicaloptimalcontrol.TheadvantagesofμGAaretheuseofglobalpropertiesandthatfewerconditionsarerequiredtoobtaintheoptimalfunction.Numericalresultsdemonstratetheeffectivenessoftheproposedmethodinreducingtheseismicresponseofstructures.
简介:NanosizedGa-containingZSM-5zeoliteswerepreparedviaisomorphoussubstitutionandimpregnationfollowedbycharacterizedusingvarioustechniques.Thecatalyticperformanceofthezeolitesforthearomatizationof1-hexenewasinvestigated.TheresultsindicatethatisomorphoussubstitutionpromotestheincorporationofGaheteroatomsintotheframeworkalongwiththeformationofextra-frameworkGaO+species([GaO+]a)thathavestrongerinteractionswiththenegativepotentialoftheframework.Inaddition,basedonthePy-IRresultsandcatalyticperformance,the[GaO+]aspecieswithstrongerLewisacidsitesproducedabettersynergismwithmoderateBr?nstedacidsitesandthusimprovedtheselectivitytoaromaticcompounds.However,theimpregnationresultsintheformationofGa2O3phaseandsmallamountsofGaO+speciesthataremainlylocatedontheexternalsurface([GaO+]b),whichcontributetoweakerLewisacidsitesduetoweakerinteractionswiththezeoliteframework.During1-hexenearomatization,thenanosizedGaisomorphouslysubstitutedZSM-5zeolitesamples(Gax-NZ5)exhibitedbettercatalyticperformancecomparedtotheimpregnatedsamples,andthehighestaromaticyield(i.e.,65.4wt%)wasachievedovertheGa4.2-NZ5sample,whichcontainedwiththehighestGacontent.
简介:摘要目的探讨25Ga+/27Ga+微创玻璃体切除术患者的手术配合方法及效果。方法分析总结104例玻璃体切除术器械护士手术配合技巧,总结配合经验。结果104例患者手术均顺利完成,切口闭合良好。结论器械护士熟悉手术器械使用方法、仪器管道连接方式、特殊器械清洗保养方法、手术过程及手术医生习惯等可节约手术时间,保证25Ga+/27Ga+微创玻璃体切除术顺利完成。
简介:Weinvestigateeffectsofannealingonmagneticpropertiesofathick(Ga,Mn)Aslayer,andfindadramaticincreaseoftheCurietemperaturefrom65to115Kbypostgrowthannealingfora500-nm(Ga,Mn)Aslayer.AugerelectronspectroscopymeasurementssuggestthattheincreaseoftheCurietemperatureismainlyduetodiffusionofMninterstitialtothefreesurface.Thedouble-crystalx-raydiffractionpatternsshowthatthelatticeconstantof(Ga,Mn)Asdecreaseswithincreasingannealingtemperature.Asaresult,theannealinginducedreductionofthelatticeconstantismainlyattributedtoremovalofMninterstitial.