简介：正电子歼灭一生光谱学(伙伴)是一种强大的技术在聚合物学习免费体积。ortho电子偶素(o-Ps)的一生，一个电子的一个界限状态和一个正电子，当紧张能被用来描绘毛孔的数字时，能被用来估计毛孔尺寸。(2,6-dimethyl-1,4-phenyleneoxide)(SPPO)根据在在sulfonated的一生系列，半径和部分免费体积的长寿o-Ps部件的价值，poly，有LiCl的不同数量的膜被计算。与LiCl的增加的数量，免费体积半径和部分免费体积第一增加了然后减少，这被发现。在在提取的水里沉浸膜以后，免费体积半径和部分免费体积在膜随着不同的水集中变化了。

简介：Ananalysisprogramforpositronannihilationlifetimespectraisonlyapplicabletoisolateddefects,butisofnouseinthepresenceofdefectivecorrelations.Suchlimitationshavelongcausedproblemsforpositronresearchersintheirstudiesofcomplicateddefectivesystems.Inordertosolvethisproblem,weaimtotakeasemiconductormaterial,forexample,toachieveacredibleaveragelifetimeofsinglecrystalsiliconunderplasticdeformationatdifferenttemperaturesusingpositronlifetimespectroscopy.Byestablishingreasonablepositrontrappingmodelswithdefectivecorrelationsandsortingoutfourlifetimecomponentswithmultipleparameters,aswellastheirrespectiveintensities,informationisobtainedonthepositrontrappingcenters,suchasthepositrontrappingratesofdefects,thedensityofthedislocationlinesandcorrelationbetweenthedislocationlines,andthevacancydefects,byfittingwiththeaveragelifetimewiththeaidofMatlabsoftware.Theseresultsgivestronggroundsfortheexistenceofdislocation-vacancycorrelationinplasticallydeformedsilicon,andlayatheoreticalfoundationfortheanalysisofpositronlifetimespectrawhenthepositrontrappingmodelinvolvesdislocation-relateddefects.