简介：AnovelInGaAs/InAlAscoupledquantumwellstructureisproposedforlargefield-inducedrefractiveindexchangewithlowabsorptionloss.Inthecaseoflowappliedelectricfieldof15kV/cmandlowabsorptionloss(±≤100cm-1),alargefield-inducedrefractiveindexchange(fortransverseelectric(TE)mode,△n=0.012;fortransversemagnetic(TM)mode,△n=0.0126)isobtainedinthestructureattheoperationwavelengthof1.55μm.Thevalueislargerbyoveroneorderofmagnitudethanthatinarectangularquantumwell.Theresultisveryattractiveforsemiconductoropticalswitchingdevices.
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