4-30 Charge State Effect on Raman Spectra of Graphene Irradiated with Highly Charged Ion-中国期刊网

摘要 Grapheneistwodimensionalmaterialswhichismadeofhoneycombedcarbonatoms.Itattractsextensiveinterestsforitswonderfulcharacteristicsthatmakethegrapheneapotentialcandidateinfieldsofmicroelectronicsproduction,moleculedetection,desalinationandDNAsequencing.Highlychargedion(HCI)hashugepotentialenergyforpeelingoffelectrons.Wheninteractingwithsolidsurface,theHCIdistortedthesolidlatticeviapotentialdepositionandthenthenanostructureswereformedonthesolidsurface.TheHCIwasexpectedasatoolforsurfacemodification.Inthiswork,HOPGandgraphemewereirradiatedwithXeq+andArq+ions.ThetypicalRamanspectraofgrapheneandHOPGirradiatedwithhighlychargedionswereshowninFig.1.TheDpeakappearedat1335cm??1onthespectraofgrapheneirradiatedwithhighlychargedions.TheintensityofDpeakincreasedwithfluence.TheratioofintensityofDpeaktothatofGpeakvariedwithfluenceinFig.2.Theratioroselinearlywiththesquarerootoffluencewhenfluencewaslow.Theratiosaturatedwhentheirradiationfluencewashigh.Thecriticalfluencedependedonthechargestateofion.Thehigherchargestateitwas,thelowercriticalfluenceitwouldbe.

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4-30 Charge State Effect on Raman Spectra of Graphene Irradiated with Highly Charged Ion

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4-30 Charge State Effect on Raman Spectra of Graphene Irradiated with Highly Charged Ion

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