Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure-中国期刊网

摘要 Thecharacteristicsofhomogeneousdischargesinmixedgasesofhydrogendilutedsilaneandargonatatmosphericpressureareinvestigatednumericallybasedonaone-dimensionalfluidmodel.Thismodeltakesintoaccounttheprimaryprocessesexcitationandionization,sixteenreactionsofradicalswithradicalsinsilane/hydrogen/argondischargesandtherefore,canadequatelyrepresentthedischargeplasma.Weanalyzetheeffectsofveryhighfrequency(VHF)onthedensitiesofspecies(e,H,SiH3,SiH+3andSiH2)insuchdischargesusingthemodel.ThesimulationresultsshowthatthedensitiesofSiH3,SiH+3,H,andSiH2increasewithVHFwhentheVHFrangesfrom30MHzto150MHz.Itisfoundthatthedepositionrateofμc-Si:HfilmdependsontheconcentrationofSiH3,SiH+3,SiH2,andHintheplasma.TheeffectsofVHFonthedepositionrateandtheamountofcrystallizedfractionforμc-Si:Hfilmgrowthisalsodiscussedinthispaper.

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Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

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Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

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