Nanocrystalline Silicon Thin Films Fabricated at 80℃ by Using Electron Cyclotron Resonance Chemical Vapor Deposition-中国期刊网

摘要 Depositionofnanocrystallinesilicon(nc-Si)onglassatverylowtemperaturesbyelectroncyclotronresonance(ECR)plasmaenhancedchemicalvapourdeposition(PECVD)wasinvestigated.Itwasshownthatnc-Sicouldbedepositedfromhydrogendilutedsilanegasatasubstratetemperatureof80℃withacrystallinefractionupto80%andalateralgrainsizeofaround50nm.Thiswasachievedbygrowingthenc-Siinalowpressureregimewhichensuredthatmono-silylspecieswerethedominantdepositionprecursor.Furthermore,ahighfluxofenergetichydrogenionswasrequiredtoinducecrystallisationofthesiliconmaterialthroughachemicalannealingprocess.

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Nanocrystalline Silicon Thin Films Fabricated at 80℃ by Using Electron Cyclotron Resonance Chemical Vapor Deposition

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Nanocrystalline Silicon Thin Films Fabricated at 80℃ by Using Electron Cyclotron Resonance Chemical Vapor Deposition

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