Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape-中国期刊网

摘要 ThediamondfilmsadherenttoSisubstratearedepositedwiththemicrowaveplasmaCVD(MPCVD)atmicrowavepowersof6000Wand4000Wfrom6hto10h,respectively,theinternalstressesofthefilmsaremeasuredbyXRD.Spectralpeakshiftandwideningareappliedtocalculatethemagnitudesofmacroandmicrostresses.Theresultsshowthatthemacrostressistensile.Theinternalstresscanbecontrolledbythemicrowavepower.Withthemicrowavepowerincreasing,theintrinsicandmacrostressesdecrease,andthemicrostressincreasessignificantly.Also,itcanbefoundthatthemacroandmicrostressesincreasewithdepositedtimewhentheotherconditionsarethesame.

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Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

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Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

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